052-6328 rev e 6 - 2011 absolute maximum ratings thermal and mechanical characteristics symbol parameter ratings unit v ces collector emitter voltage 600 v i c1 continuous collector current @ t c = 25c 96 a i c2 continuous collector current @ t c = 100c 54 i cm pulsed collector current 1 161 v ge gate-emitter voltage 2 30 v p d total power dissipation @ t c = 25c 416 w ssoa switching safe operating area @ t j = 150c 161a @ 600v t j , t stg operating and storage junction temperature range -55 to 150 c t l lead temperature for soldering: 0.063" from case for 10 seconds 300 single die igbt typical applications zvs phase shifted and other full bridge half bridge high power pfc boost welding ups, solar, and other inverters high frequency, high ef? ciency industrial features fast switching with low emi very low e off for maximum ef? ciency ultra low c res for improved noise immunity low conduction loss low gate charge increased intrinsic gate resistance for low emi rohs compliant 600v power mos 8 ? is a high speed punch-through switch-mode igbt. low e off is achieved through leading technology silicon design and lifetime control processes. a reduced e off - v ce(on) tradeoff results in superior ef ? ciency compared to other igbt technologies. low gate charge and a greatly reduced ratio of c res /c ies provide excellent noise immunity, short delay times and simple gate drive. the intrinsic chip gate resistance and capacitance of the poly-silicone gate structure help control di/dt during switching, resulting in low emi, even when switching at high frequency. symbol characteristic min typ max unit r jc junction to case thermal resistance - - .3 c/w w t package weight - 5.9 - g torque mounting torque (to-247 package), 4-40 or m3 screw 10 inlbf microsemi website - http://www.microsemi.com high speed pt igbt static characteristics t j = 25c unless otherwise speci? ed symbol parameter test conditions min typ max unit v br(ces) collector-emitter breakdown voltage v ge = 0v, i c = 1.0ma 600 v v ce(on) collector-emitter on voltage v ge = 1 5 v, i c = 32a t j = 25c 2.0 2.5 t j = 125c 1.9 v ge(th) gate emitter threshold voltage v ge =v ce , i c = 1ma 3 4.5 6 i ces zero gate voltage collector current v ce = 600v, v ge = 0v t j = 25c 250 a t j = 125c 2500 i ges gate-emitter leakage current v gs = 30v 100 na APT54GA60B to-247 d 3 pak apt54ga60s APT54GA60B apt54ga60s downloaded from: http:///
052-6328 rev e 6 - 2011 dynamic characteristics t j = 25c unless otherwise speci? ed 1 repetitive rating: pulse width and case temperature limited by maximum junction temperature. 2 pulse test: pulse width < 380 s , duty cycle < 2%. 3 see mil-std-750 method 34714 r g is external gate resistance, not including internal gate resistance or gate driver impedance. (mic4452) 5 e on2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the igbt turn on energy loss. a combi device is used for the clamping diode.6 e off is the clamped inductive turn-off energy measured in accordance with jedec standard jesd24-1. microsemi reserves the right to change, without notice, the speci? cations and information contained herein. APT54GA60B_s symbol parameter test conditions min typ max unit c ies input capacitance capacitance v ge = 0v, v ce = 25v f = 1mhz 4130 pf c oes output capacitance 350 c res reverse transfer capacitance 45 q g 3 total gate charge gate charge v ge = 15v v ce = 300v i c = 32a 158 nc q ge gate-emitter charge 26 q gc gate- collector charge 52 ssoa switching safe operating area t j = 150c, r g = 4.7 4 , v ge = 15v, l= 100uh, v ce = 600v 161 a t d(on) turn-on delay time inductive switching (25c) v cc = 400v v ge = 15v i c = 32a r g = 4.7 4 t j = +25c 17 ns t r current rise time 20 t d(off) turn-off delay time 112 t f current fall time 86 e on2 turn-on switching energy 534 j e off 6 turn-off switching energy 466 t d(on turn-on delay time inductive switching (125c) v cc = 400v v ge = 15v i c = 32a r g = 4.7 4 t j = +125c 16 ns t r current rise time 21 t d(off) turn-off delay time 146 t f current fall time 145 e on2 turn-on switching energy 891 j e off 6 turn-off switching energy 838 downloaded from: http:///
052-6328 rev e 6 - 2011 typical performance curves APT54GA60B_s 0 20 40 60 80 100 120 140 160 25 50 75 100 125 150 0 1 2 3 4 0 25 50 75 100 125 150 0 2 4 6 8 10 12 14 16 0 20 40 60 80 100 120 140 160 0 1 2 3 4 6 8 10 12 14 16 0 50 100 150 200 0 2 4 6 8 10 12 14 0 50 100 150 200 250 300 350 0 4 8 12 16 20 24 28 32 0 25 50 75 100 0 2 4 6 8 250 s pulse test<0.5 % duty cycle t j = 25c. 250 s pulse test <0.5 % duty cycle v ge = 15v. 250 s pulse test <0.5 % duty cycle i c = 16a i c = 32a i c = 64a i c = 32a i c = 64a 13v 5v 15v i c = 32a t j = 25c v ce = 480v v ce = 300v v ce = 120v t j = 25c t j = -55c v ge = 15v t j = 55c t j = 150c v ce , collector-to-emitter voltage (v) figure 1, output characteristics (t j = 25c) i c , collector current (a) t j = 25c t j = 125c v ce , collector-to-emitter voltage (v) figure 2, output characteristics (t j = 25c) i c , collector current (a) t j = 125c v ge , gate-to-emitter voltage (v) figure 3, transfer characteristics i c , collector current (a) v ge , gate-to-emitter voltage (v) figure 5, on state voltage vs gate-to-emitter voltage v ce , collector-to-emitter voltage (v) gate charge (nc) figure 4, gate charge v ge , gate-to-emitter voltage (v) t j , junction temperature (c) figure 6, on state voltage vs junction temperature v ce , collector-to-emitter voltage (v) t c , case temperature (c) figure 8, dc collector current vs case temperature i c , dc collector current (a) -50 -25 0 25 50 75 100 125 150 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 t j , junction temperature figure 7, threshold voltage vs junction temperature v gs(th) , threshold voltage (normalized) 6v 7v 8v i c = 16a 9v 10v downloaded from: http:///
052-6328 rev e 6 - 2011 0 400 800 1200 1600 2000 2400 0 25 50 75 100 125 0 1000 2000 3000 4000 5000 6000 0 10 20 30 40 50 0 400 800 1200 1600 2000 2400 0 10 20 30 40 50 60 70 0 400 800 1200 1600 2000 2400 0 10 20 30 40 50 60 70 0 40 80 120 160 200 0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70 0 40 80 120 160 200 0 10 20 30 40 50 60 70 14 15 16 17 18 19 20 21 0 10 20 30 40 50 60 70 v ge =15v,t j =125c v ge =15v,t j =25c v ce = 400v r g = 4.7 l = 100 h v ce = 400v v ge = +15v r g =4.7 v ce = 400v t j = 25c , or 125c r g = 4.7 l = 100 h v ge = 15v v ce = 400v v ge = +15v r g = 4.7 v ce = 400v v ge = +15v r g = 10 r g = 4.7 , l = 100 h, v ce = 400v t j = 125c t j = 25c t j = 125c t j = 25c r g = 4.7 , l = 100 h, v ce = 400v t j = 25 or 125c,v ge = 15v t j = 125c, v ge = 15v t j = 25c, v ge = 15v e on2, 64a e on2, 32a e off, 32a e on2, 16a e off, 16a v ce = 400v v ge = +15v t j = 125c e on2, 64a e on2, 32a e off, 64a e off, 32a e on2, 16a e off, 16a i ce , collector-to-emitter current (a) figure 9, turn-on delay time vs collector current t d(on) , turn-on delay time (ns) i ce , collector-to-emitter current (a) figure 10, turn-off delay time vs collector current t d(off) , turn-off delay time (ns) i ce , collector-to-emitter current (a) figure 11, current rise time vs collector current t r , rise time (ns) i ce , collector-to-emitter current (a) figure 12, current fall time vs collector current t r , fall time (ns) i ce , collector-to-emitter current (a) figure 13, turn-on energy loss vs collector current e on2 , turn on energy loss ( j) i ce , collector-to-emitter current (a) figure 14, turn-off energy loss vs collector current e off , turn off energy loss ( j) r g , gate resistance (ohms) figure 15, switching energy losses vs gate resistance switching energy losses ( j) t j , junction temperature (c) figure 16, switching energy losses vs junction temperature switching energy losses ( j) e off, 64a typical performance curves APT54GA60B_s downloaded from: http:///
052-6328 rev e 6 - 2011 typical performance curves APT54GA60B_s 0 0.05 0.15 0.20 0.25 0.30 0.35 10 -5 10 -4 10 -3 10 -2 10 1.0 -1 0.10 0 100 200 300 400 500 10 100 1000 10000 z jc , thermal impedance (c/w) 0.3 d = 0.9 0.7 single pulse rectangular pulse duration (seconds) figure 19, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.5 0.1 0.05 c oes c res c ies peak t j = p dm x z jc +t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: v ce , collector-to-emitter voltage (volts) figure 17, capacitance vs collector-to-emitter voltage c, capacitance (pf) 0.1 1 10 100 500 1 10 100 1000 v ce , collector-to-emitter voltage figure 18, minimum switching safe operating area i c , collector current (a) downloaded from: http:///
052-6328 rev e 6 - 2011 figure 13, turn-on switching waveforms and de? nitions t j = 125c collector current collector voltage gate voltage 5% 10% t d(on) 90% 10% t r 5% switching energy figure 14, turn-off switching waveforms and de? nitions t j = 125c collector voltage collector current gate voltage switching energy 0 t d(off) 10% t f 90% i c a d.u.t. v ce v cc apt30dq60 figure 12, inductive switching test circuit APT54GA60B_s 15.49 (.610)16.26 (.640) 5.38 (.212)6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065)2.13 (.084) 1.01 (.040)1.40 (.055) 3.50 (.138)3.81 (.150) 2.87 (.113)3.12 (.123) 4.69 (.185)5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087)2.59 (.102) 0.40 (.016) gate 5.45 (.215) bsc 2-plcs. 15.95 (.628)16.05(.632) 1.22 (.048)1.32 (.052) 5.45 (.215) bsc {2 plcs. } 4.98 (.196)5.08 (.200) 1.47 (.058) 1.57 (.062) 2.67 (.105)2.84 (.112) 0.46 (.018) {3 plcs} 0.56 (.022) and leadsare plated 3.81 (.150)4.06 (.160) (base of lead) 1.98 (.078)2.08 (.082) gate 0.020 (.001)0.178 (.007) 1.27 (.050)1.40 (.055) 11.51 (.453)11.61 (.457) 13.41 (.528)13.51(.532) revised8/29/97 1.04 (.041)1.15(.045) 13.79 (.543)13.99(.551) revised 4/18/95 collectoremitter collector collector emitter collector collector e3 100% sn plated e1 sac: tin, silver, copper to-247 package outline d 3 pak package outline 1.016 (.040) dimensions in millimeters (inches) dimensions in millimeters (inches) downloaded from: http:///
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